DocumentCode
1482870
Title
Complementary high-voltage technology based on n-type CdSe:In and p-type Ge:Cu thin-film transistors
Author
DeCubber, A.M. ; DeSmet, H. ; DeVos, J. ; Carchon, N. ; VanCalster, A.
Author_Institution
Dept. of Electron. & Inf. Syst., Ghent Univ., Belgium
Volume
17
Issue
12
fYear
1996
Firstpage
581
Lastpage
583
Abstract
A breakthrough in the complementary thin-film transistor technology allows the production of voltage level shifters that raise a 5-V input span to an 80-V output span. The static and dynamic behavior of these level shifters is discussed. The present technology is applicable for the integration of driver circuits on the substrate of electroluminescent displays.
Keywords
II-VI semiconductors; cadmium compounds; copper; driver circuits; elemental semiconductors; germanium; indium; thin film transistors; 5 V; 80 V; CdSe:In-Ge:Cu; complementary high-voltage technology; driver circuit; n-type CdSe:In; p-type Ge:C; thin-film transistor; voltage level shifter; Active matrix liquid crystal displays; Active matrix technology; Driver circuits; Electroluminescent devices; Liquid crystal displays; Medium voltage; Semiconductor films; Substrates; Thin film transistors; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.545777
Filename
545777
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