DocumentCode
1482876
Title
CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
Author
Asif Khan, M. ; Chen, Qian ; Shur, M.S. ; Dermott, B.T. ; Higgins, J.A. ; Burm, J. ; Schaff, W.J. ; Eastman, L.F.
Author_Institution
APA Opt. Inc., Blaine, MN, USA
Volume
17
Issue
12
fYear
1996
Firstpage
584
Lastpage
585
Abstract
We report on a 0.15-μm gate length AlGaN/GaN doped channel heterostructure field effect transistor (DC-HFET) with maximum frequency of oscillation in excess of 97 GHz. HFETs based on our doped channel design exhibited CW microwave operation up to 15 GHz with a maximum output power of approximately 270 mW/mm at 10 GHz. These values are still limited by parasitics and can be significantly improved by optimizing the device design.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; microwave field effect transistors; 0.15 micron; 10 GHz; 15 GHz; 97 GHz; CW microwave operation; DC-HFET; GaN-AlGaN; device design optimization; parasitics; short-channel doped channel heterostructure field effect transistor; Aluminum gallium nitride; Cutoff frequency; Gallium nitride; HEMTs; MODFETs; Microwave devices; Monitoring; Optical saturation; Power generation; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.545778
Filename
545778
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