• DocumentCode
    1482880
  • Title

    A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET

  • Author

    Arafa, M. ; Ismail, K. ; Chu, J.O. ; Meyerson, B.S. ; Adesida, I.

  • Author_Institution
    Dept. of Electr. Eng., Illinois Univ., Urbana, IL, USA
  • Volume
    17
  • Issue
    12
  • fYear
    1996
  • Firstpage
    586
  • Lastpage
    588
  • Abstract
    A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistors (MODFETs) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum dc extrinsic transconductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.
  • Keywords
    Ge-Si alloys; high electron mobility transistors; semiconductor materials; 0.1 micron; 0.5 V; 70 GHz; DC extrinsic transconductance; SiGe; drain bias; fabrication; high frequency characteristics; knee voltage; modulation-doped field-effect transistor; p-type SiGe MODFET; self-aligned process; turn-on resistance; unity current-gain cutoff frequency; Cutoff frequency; Epitaxial layers; FETs; Fabrication; Germanium silicon alloys; HEMTs; Knee; MODFETs; Silicon germanium; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.545779
  • Filename
    545779
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1482880