Title :
Current transport characteristics of SiGeC/Si heterojunction diode
Author :
Chen, F. ; Orner, B.A. ; Guerin, D. ; Khan, A. ; Berger, P.R. ; Shah, S.Ismat ; Kolodzey, J.
Author_Institution :
Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
Abstract :
The characteristics of heterojunction diodes fabricated from p-type epitaxial Si/sub 0.07/Ge/sub 0.91/C/sub 0.02/ alloy grown by molecular beam epitaxy on n-type Si
Keywords :
Ge-Si alloys; Hall effect; p-n heterojunctions; rectification; semiconductor diodes; semiconductor materials; Hall effect; SiGeC-Si; avalanche breakdown; capacitance-voltage characteristics; current transport; current-voltage characteristics; electron injection; heterojunction diode; molecular beam epitaxy; n-type Si; p-type epitaxial Si/sub 0.07/Ge/sub 0.91/C/sub 0.02/ alloy; rectification; reverse leakage current; temperature dependence; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Diodes; Germanium alloys; Hall effect; Heterojunctions; Leakage current; Molecular beam epitaxial growth; Silicon alloys;
Journal_Title :
Electron Device Letters, IEEE
