DocumentCode
1482891
Title
Current transport characteristics of SiGeC/Si heterojunction diode
Author
Chen, F. ; Orner, B.A. ; Guerin, D. ; Khan, A. ; Berger, P.R. ; Shah, S.Ismat ; Kolodzey, J.
Author_Institution
Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
Volume
17
Issue
12
fYear
1996
Firstpage
589
Lastpage
591
Abstract
The characteristics of heterojunction diodes fabricated from p-type epitaxial Si/sub 0.07/Ge/sub 0.91/C/sub 0.02/ alloy grown by molecular beam epitaxy on n-type Si
Keywords
Ge-Si alloys; Hall effect; p-n heterojunctions; rectification; semiconductor diodes; semiconductor materials; Hall effect; SiGeC-Si; avalanche breakdown; capacitance-voltage characteristics; current transport; current-voltage characteristics; electron injection; heterojunction diode; molecular beam epitaxy; n-type Si; p-type epitaxial Si/sub 0.07/Ge/sub 0.91/C/sub 0.02/ alloy; rectification; reverse leakage current; temperature dependence; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Diodes; Germanium alloys; Hall effect; Heterojunctions; Leakage current; Molecular beam epitaxial growth; Silicon alloys;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.545780
Filename
545780
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