• DocumentCode
    1482911
  • Title

    Cut to the ground

  • Author

    Davies, D.

  • Author_Institution
    IET, Stevenage, UK
  • Volume
    48
  • Issue
    7
  • fYear
    2012
  • Firstpage
    352
  • Lastpage
    352
  • Abstract
    Researchers in Korea have presented a simple physical-dicing-based method for backside source grounding of high electron mobility transistors through 447 m-thick SiC substrate without complex and costly pre-thinning treatments.
  • Keywords
    high electron mobility transistors; silicon compounds; HEMT; SiC; backside source grounding; high electron mobility transistors; physical-dicing-based method; size 447 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.0878
  • Filename
    6177759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1482911