DocumentCode :
1482947
Title :
An RC network analysis of long term Ti:LiNbO3 bias stability
Author :
Korotky, Steven K. ; Veselka, John J.
Author_Institution :
Lucent Technols., AT&T Bell Labs., Holmdel, NJ, USA
Volume :
14
Issue :
12
fYear :
1996
fDate :
12/1/1996 12:00:00 AM
Firstpage :
2687
Lastpage :
2697
Abstract :
Experimental bias stability data for LiNbO3 electrooptic modulators spanning intervals from seconds to hundreds of days are analyzed. We find that the unique features of the data may be described through refinements of previous resistor capacitor network models. Network element values deduced from the experimental data provide compelling evidence that the interfaces between constituent materials play a significant role in the long term behavior of devices. The success of the model suggests it may be a valuable tool in the development of devices having low bias drift rates and in establishing test and reliability criteria
Keywords :
electro-optical modulation; integrated optics; lithium compounds; modelling; network analysis; stability; LiNbO3 electrooptic modulators; LiNbO3:Ti; RC network analysis; long term Ti:LiNbO3 bias stability; long term behavior; low bias drift rates; reliability criteria; resistor capacitor network models; test criteria; Bandwidth; Capacitors; Chirp modulation; Circuit stability; Electrooptic modulators; Insertion loss; Low voltage; Niobium compounds; Stability analysis; Testing;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.545788
Filename :
545788
Link To Document :
بازگشت