DocumentCode :
1483015
Title :
CMOS-Compatible 1 
3 Silicon Electrooptic Switch With Low Crosstalk
Author :
Wang, Wanjun ; Zhao, Yong ; Zhou, Haifeng ; Hao, Yinlei ; Yang, Jianyi ; Wang, Minghua ; Jiang, Xiaoqing
Author_Institution :
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Volume :
23
Issue :
11
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
751
Lastpage :
753
Abstract :
A 1 × 3 Mach-Zehnder-based electrooptic switch in silicon is presented, which employs only two p-i-n phase shifters and possess a simple control manner. Average crosstalk level and extinction ratio are -21.9 and 22.9 dB, respectively, at 1550-nm wavelength. The influences of free carrier absorption (FCA) and fabrication error on the crosstalk of the switch are analyzed according to the theory and experimental results.
Keywords :
CMOS integrated circuits; electro-optical switches; elemental semiconductors; integrated optics; integrated optoelectronics; optical communication equipment; optical crosstalk; optical phase shifters; optical waveguides; p-i-n diodes; silicon; CMOS; Mach-Zehnder based electrooptic switch; Si; fabrication error; free carrier absorption; p-i-n phase shifter; wavelength 1550 nm; Crosstalk; Fabrication; Optical switches; Optical waveguides; Phase shifters; Silicon; Optical packet switching (OPS); optical switches; photonic integrated circuits; silicon-on-insulator technology;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2132757
Filename :
5740306
Link To Document :
