DocumentCode :
1483082
Title :
MEMS Hall effect pressure sensor
Author :
Hui-Yang Yu ; Ming Qin ; Meng Nie
Author_Institution :
Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China
Volume :
48
Issue :
7
fYear :
2012
Firstpage :
393
Lastpage :
394
Abstract :
A novel micromachined pressure sensor is reported. The sensor works based on the Hall effect. The structure and fabrication process of this sensor are presented. During measurement, the applied pressure changes from 30 to 110 kPa. Test results show that the output Hall voltage of the sensor increases linearly with the pressure applied on the membrane and the sensitivity is 22.8 V/hPa. Furthermore, it is found that the output voltage is composed of two parts: the Hall voltage and the offset voltage. The offset voltage also changes with the applied pressure, but is much smaller than the Hall voltage.
Keywords :
Hall effect transducers; micromachining; microsensors; pressure sensors; Hall voltage; MEMS Hall effect pressure sensor; micromachined pressure sensor; offset voltage; pressure 30 kPa to 110 kPa; sensor fabrication process;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2011.4052
Filename :
6177785
Link To Document :
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