Modelling of stress-induced leakage current in short-channel n-MOSFETs

The stress-induced leakage current (SILC) in short-channel n-MOSFETs is calculated based on a previously developed model for the steady-state component of SILC across the ultra-thin gate oxide of a MOS capacitor. It is found that the contribution of the component due to SILC in the gate current of MOSFETs must not be neglected. It is also found that SILC is larger in the source side than in the drain side.