Title :
Monitoring hot-electron-induced degradation of floating-body SOI MOSFETs
Author :
Choi, Jin-young ; Sundaresan, Ravishankar ; Fossum, Jerry G.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
A simple model relating the hot-electron-controlled device lifetime of floating-body SOI MOSFETs to the body voltage is discussed. The model is derived from the familiar relationship between the device lifetime and the substrate current of bulk MOSFETs, a relationship that cannot be measured directly in floating-body MOSFETs. The model, which allows quick estimation of the device lifetime from body-voltage measurements, is supported by measurements of hot-electron-induced degradation of floating-body SOI MOSFETs fabricated using SIMOX substrates.<>
Keywords :
hot carriers; insulated gate field effect transistors; semiconductor device models; SIMOX substrates; Si; body-voltage measurements; floating-body SOI MOSFETs; hot-electron-controlled device lifetime; hot-electron-induced degradation; model; substrate current; CMOS technology; Current measurement; Degradation; Impact ionization; Integrated circuit measurements; Integrated circuit technology; MOSFETs; Monitoring; Semiconductor process modeling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
