Title :
Spin-valve films using exchange-coupled CrMnPt/Co structure
Author :
Hoshiya, H. ; Soeya, S. ; Hamakawa, Y. ; Nakatani, R. ; Fuyama, M. ; Fukui, H. ; Sugita, Y.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Hitachi, Japan
fDate :
9/1/1997 12:00:00 AM
Abstract :
Spin-valve films using CrMnPt/Co structure were investigated. The exchange coupling field (Hex) applied on 3 nm thick Co pinned layers was increased by annealing from 190 Oe to 320-380 Oe. The annealing treatment necessary for the enhancement of the Hex was typically 230°C, 1 hr. The annealing distorted the crystal lattice of the CrMnPt films, which is likely to enhance the Hex. The blocking temperature was 320°C. The resistivity of the CrMnPt films was as high as 300 μΩcm resulting in low current shunting to antiferromagnetic layers in spin-valve films
Keywords :
annealing; chromium alloys; cobalt; exchange interactions (electron); giant magnetoresistance; magnetic heads; magnetic multilayers; magnetic thin film devices; magnetoresistive devices; manganese alloys; platinum alloys; 1 h; 230 degC; 300 muohmcm; 320 degC; CrMnPt-Co; GMR; annealing; antiferromagnetic layers; blocking temperature; crystal lattice; current shunting; exchange-coupled structure; magnetic heads; pinned layers; resistivity; spin-valve films; Annealing; Antiferromagnetic materials; Coercive force; Conductivity; Glass; Head; Lattices; Magnetic fields; Magnetic films; Magnetoresistance; Production; Temperature; Temperature dependence;
Journal_Title :
Magnetics, IEEE Transactions on
