Small track width MR sensors stabilized with NiMn

Author

Devasahayam, Adrian J. ; Mountfield, Keith R. ; Kryder, Mark H.

Author_Institution

Data Storage Syst. Center, Carnegie Mellon Univ., Pittsburgh, PA, USA

Volume

33

Issue

5

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

2881

Lastpage

2883

Abstract

Small track width magnetoresistive sensors, stabilized with NiMn exchange tabs were fabricated. Two configurations were investigated: one with the NiMn on top and the other with the NiMn at the bottom. Both types of structures were found to be effectively stabilized by the antiferromagnetic NiMn. In order to obtain the desired properties of the NiMn/NiFe exchange couple, a long, high temperature anneal needs to be done. With the second configuration (NiMn at the bottom), the anneal is done before the deposition of the NiFe sensor. This configuration could be extended to spin-valves which are temperature sensitive, and since the anneal is done before the deposition of the NiFe, the sensor material is not subject to the high temperature anneal. The two configurations require different fabrication steps which are described in this paper. The stabilizing properties of NiMn are also compared with NiO

Keywords

Barkhausen effect; annealing; antiferromagnetic materials; iron alloys; magnetic heads; magnetic multilayers; magnetic recording noise; magnetic sensors; magnetoresistive devices; manganese alloys; nickel alloys; MR sensors; NiMn-NiFe; antiferromagnetic layer; exchange couple; exchange tabs; fabrication steps; high temperature anneal; magnetic heads; magnetoresistive sensors; spin-valves; temperature sensitivity; track width; Annealing; Antiferromagnetic materials; Corrosion; Data storage systems; Fabrication; Magnetic materials; Magnetic sensors; Magnetoresistance; Sensor systems; Temperature sensors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.617785

Filename

617785