DocumentCode :
1483306
Title :
Author :
Zhou, Huimei ; Li, Bei ; Yang, Zheng ; Zhan, Ning ; Yan, Dong ; Lake, Roger K. ; Liu, Jianlin
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
Volume :
10
Issue :
3
fYear :
2011
fDate :
5/1/2011 12:00:00 AM
Firstpage :
499
Lastpage :
505
Abstract :
A TiSi2 nanocrystal (NC) memory was fabricated. TiSi2 NCs were synthesized on SiO2 by annealing Ti covered Si NCs. Compared to the reference Si NC memory, both experiment and simulation results show that TiSi2 NC memory exhibits larger memory window, faster writing and erasing, and longer retention lifetime as a result of the metallic property of the silicide NCs. Due to thermally stable, CMOS compatible properties, TiSi2 NCs are highly promising for nonvolatile memory device application.
Keywords :
MOSFET; annealing; nanostructured materials; random-access storage; thermal stability; titanium compounds; TiSi2; annealing; memory window; metallic property; nanocrystal metal oxide semiconductor field effect transistor memory; nonvolatile memory device; retention lifetime; thermal stability; Annealing; FETs; Nanocrystals; Nonvolatile memory; Silicides; Writing; $hbox{TiSi}_{2}$
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2010.2049271
Filename :
5458002
Link To Document :
