Design and performance of the mesh-type high-speed silicon optical position-sensitive devices

Author

Dutta, Achyut Kumar ; Hatanaka, Yoshinori

Author_Institution

Res. Inst. of Technol., Shizuoka Univ., Hamamatsu, Japan

Volume

38

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

498

Lastpage

504

Abstract

A high speed optical position-sensitive device (PSD) which was fabricated using a certain structure of the mesh-type resistive layer for reducing the junction capacitance is discussed. Its performance is compared with the conventional type of PSD (CPSD) fabricated by the same technology. The mesh-type high speed PSD (MEPSD) is based on an ion-implanted Si p-i-n structure and has an area of 14×14 mm² with 30-μm strip-width and 125-μm pitch. The temporal response of the MEPSD is found to be improved by a factor of 1.83 times compared to the CPSD. A photosensitivity comparable to that of the CPSD is obtained. Its position linearity for detection is also comparable with that of the CPSD. The performance of the laboratory demonstration devices illustrates the feasibility of the concept for high-speed PSD

Keywords

electric sensing devices; elemental semiconductors; p-i-n diodes; photodetectors; position measurement; silicon; 125 micron; 30 micron; Si; junction capacitance; laboratory demonstration devices; mesh-type resistive layer; optical position-sensitive devices; p-i-n structure; photosensitivity; pitch; position linearity; strip-width; temporal response; Capacitance; Delay; Electrodes; High speed optical techniques; Linearity; Optical design; Optical devices; Optical sensors; PIN photodiodes; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.75158

Filename

75158