DocumentCode :
1483556
Title :
Nonlinear R-2R Transistor-Only DAC
Author :
Lee, Tai-Cheng ; Lin, Cheng-Hsiao
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
57
Issue :
10
fYear :
2010
Firstpage :
2644
Lastpage :
2653
Abstract :
A nonlinear current-division technique is proposed with the design parameters on the aspect ratio of transistors only. The design approach uses the linear voltage-to-current relation for MOS transistors in the triode region. The nonlinear characteristics of the output current can be obtained by adding additional transistors on the conventional R-2R transistor-only ladder. This work can be employed for the applications of gamma-corrected digital-to-analog converters in the display driving systems. The simulation and measurement results of R-2R transistor ladders using an n-type amorphous-silicon thin-film-transistor process confirm the design strategy practicably.
Keywords :
MOSFET; amorphous semiconductors; digital-analogue conversion; elemental semiconductors; semiconductor thin films; silicon; thin film transistors; MOS transistors; Si; aspect ratio; design parameters; display driving systems; gamma-corrected digital-to-analog converters; linear voltage-to-current relation; metal-oxide-semiconductor transistors; n-type amorphous-silicon thin-film-transistor process; nonlinear R-2R transistor-only DAC; nonlinear current-division technique; nonlinear output current characteristics; triode region; Circuits; Digital-analog conversion; Displays; Humans; MOS capacitors; MOSFETs; Process design; Resistors; Thin film transistors; Threshold voltage; Amorphous-silicon thin-film transistor (a-Si TFT); R-2R transistor-only ladder; digital-to-analog converters (DACs); gamma-corrected;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2010.2046973
Filename :
5458036
Link To Document :
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