Title :
Current-voltage characteristics of thin film and bulk diamond treated in hydrogen plasma
Author :
Albin, Sacharia ; Watkins, Linwood
Author_Institution :
Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
It is shown that the electrical properties of thin film and bulk diamond can be systematically altered by hydrogen plasma treatment under controlled conditions. The concentration of electrically active hydrogen introduced in diamond can be determined from the current-voltage characteristics of hydrogenated samples containing traps. Hydrogen passivation of deep traps in diamond is clearly demonstrated.<>
Keywords :
deep levels; diamond; electrical conductivity of crystalline semiconductors and insulators; electron traps; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; hole traps; impurity electron states; passivation; plasma CVD coatings; semiconductor thin films; C; C:H; H plasma treatment; bulk diamond; controlled conditions; current-voltage characteristics; deep traps; electrical properties; elemental semiconductors; hydrogenated samples; passivation; thin film; Conductivity; Current-voltage characteristics; High speed optical techniques; Hydrogen; Optical devices; Optical films; Passivation; Plasma measurements; Plasma properties; Transistors;
Journal_Title :
Electron Device Letters, IEEE
