Title :
Improved Conversion Efficiency of Textured InGaN Solar Cells With Interdigitated Imbedded Electrodes
Author :
Horng, Ray-Hua ; Chu, Mu-Tao ; Chen, Hung-Ruei ; Liao, Wen-Yih ; Wu, Ming-Hsien ; Chen, Kuo-Feng ; Wuu, Dong-Sing
Author_Institution :
Dept. of Electro-Opt. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/2010 12:00:00 AM
Abstract :
Textured n-GaN/i-InGaN/p-GaN solar cells with interdigitated imbedded electrodes (IIEs) eliminating the electrode-shading loss have been investigated. In the absence of the electrode-shading effect, the optimized textured solar cell exhibits a conversion efficiency of 1.03%, which is 78% and 47% higher than those of the conventional structure and the structure with mirror coated on silicon substrate with electrode shading, respectively. The short-circuit current density of this textured HE device is about 0.65 mA/cm2, which is 71% and 44% higher than those of the two compared structures, respectively.
Keywords :
III-V semiconductors; current density; electrochemical electrodes; gallium compounds; indium compounds; solar cells; wide band gap semiconductors; InGaN; conversion efficiency; electrode-shading loss elimination; interdigitated imbedded electrodes; short-circuit current density; textured solar cells; $hbox{n-GaN}/hbox{i-InGaN}/hbox{p-GaN}$ solar cell; Electrode shading; interdigitated imbedded electrodes (IIEs); textured;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2046615
