Title :
New short-channel n-MOSFET current-voltage model in strong inversion and unified parameter extraction method
Author :
Moon, Byung-Jong ; Park, Chan-Kwang ; Lee, Kwyro ; Shur, Michael
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
A semiempirical strong inversion current-voltage (I-V) model for submicrometer n-channel MOSFETs which is suitable for circuit simulation and rapid process characterization is proposed. The model is based on a more accurate velocity-field relationship in the linear region and finite drain conductance due to the channel length modulation effect in the saturation region. The parameter extraction starts from the experimental determination of the MOSFET saturation current and saturation voltage by differentiating the output characteristics in a unified and unambiguous way. These results are used in order to systematically extract the device and process parameters such as the effective electron saturation velocity and mobility, drain and source series resistances, effective gate length and characteristic length for channel length modulation, and short-channel effects. The values agree well with other independent measurements. The results of experimental studies of wide n-MOSFETs with nominal gate length of 0.8, 1.0, and 1.2 μm fabricated by an n-well CMOS process are reported. The calculated I-V characteristics using the extracted parameters show excellent agreement with the measurement results
Keywords :
insulated gate field effect transistors; semiconductor device models; 0.8 to 1.2 micron; calculated I-V characteristics; channel length modulation effect; characteristic length; circuit simulation; drain series resistance; effective gate length; electron mobility; electron saturation velocity; experimental studies; extracted parameters; finite drain conductance; gate length; linear region; measurement results; n-well CMOS process; rapid process characterization; saturation current; saturation region; saturation voltage; semiempirical model; short-channel effects; short-channel n-MOSFET current-voltage model; source series resistances; strong inversion; strong inversion current voltage model; submicrometer n-channel MOSFETs; unified parameter extraction method; velocity-field relationship; wide n-MOSFETs; Analytical models; Circuit simulation; Electric resistance; Electron mobility; MOSFET circuits; Marine vehicles; Moon; Parameter extraction; Poisson equations; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
