Title :
Capacitance-voltage measurements on metal-SiO2-diamond structures fabricated with (100)- and (111)-oriented substrates
Author :
Geis, M.W. ; Gregory, J.A. ; Pate, B.B.
Author_Institution :
MIT, Lincoln Lab., Lexington, MA, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
Metal-SiO2-diamond structures fabricated using (100)- or (111)-oriented substrates of type IIb natural diamond (a p-type semiconductor) are discussed. The SiO2-diamond interface was electrically characterized by measuring the capacitance between the metal electrode and the diamond substrate as a function of bias voltage. Capacitance-voltage (C-V) characteristics were measured for various SiO2 thicknesses and substrate temperatures, with and without exposure to ultraviolet light. For (100)-oriented diamond substrates, the SiO2-diamond interface is of device quality, and the minimum conduction-band energy of diamond is found to be 1.4 eV below that of SiO2. For (111)-oriented substrates this energy for diamond is 1.6 eV above that for SiO2 and 0.7 eV above the vacuum level. From these results, it appears that useful depletion-mode, metal-SiO2-diamond FETs can be made on (100)-oriented diamond substrates and that (111)-oriented substrates may be of value as cold cathodes
Keywords :
capacitance measurement; diamond; elemental semiconductors; metal-insulator-semiconductor structures; silicon compounds; (100)-oriented diamond; (111)-oriented diamond; C substrates; SiO2 thicknesses; bias voltage; capacitance; capacitance-voltage measurements; cold cathodes; conduction-band energy; depletion-mode MOSFET; exposure to ultraviolet light; p-type semiconductor; semiconductors; substrate temperatures; type IIb natural diamond; Capacitance measurement; Capacitance-voltage characteristics; Electric variables measurement; Electrodes; Elementary particle vacuum; FETs; Substrates; Temperature; Thickness measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
