Title :
Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport
Author :
Fischetti, Massimo V.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
Monte Carlo simulations of electron transport in seven semiconductors of the diamond and zinc-blende structure (Ge, Si, GaAs, InP, AlAs, InAs, GaP) and some of their alloys (AlxGa1-x As, InxGa1-xAs, GaxIn1-x P) and hole transport in Si were performed at two lattice temperatures (77 and 300 K). The model uses band structures obtained from local empirical pseudopotential calculations and particle-lattice scattering rates computed from the Fermi golden rule to account for band-structure effects. Intervalley deformation potentials significantly lower than those which have been previously reported are needed to reproduce available experimental data. This is attributed to the more complicated band structures, particularly around the L- and X-symmetry points in most materials. Satisfactory agreement is obtained between Monte Carlo results and some experiments
Keywords :
III-V semiconductors; Monte Carlo methods; elemental semiconductors; 300 K; 77 K; AlxGa1-xAs; AlAs; Fermi golden rule; GaxIn1-xP; GaAs; GaP; Ge; InxGa1-xAs; InAs; InP; L-symmetry points; Monte Carlo simulation; Si; X-symmetry points; band structures; band-structure effects; complicated band structures; diamond structure; electron transport; experimental data; hole transport; homogeneous transport; lattice temperatures; local empirical pseudopotential calculations; particle-lattice scattering rates; technologically significant semiconductors; zinc-blende structures; Aluminum alloys; Charge carrier processes; Gallium alloys; Gallium arsenide; Germanium alloys; Gold alloys; Indium phosphide; Lattices; Silicon alloys; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
