Title :
Quantum-well doped p-channel AlGaAs/GaAs0.85Sb0.15 /GaAs heterostructure field-effect transistors
Author :
Byun, Young Hee ; Schuermeyer, Fritz L. ; Lee, Kwyro ; Shur, Michael ; Cook, Paul ; Martinez, Edgar ; Martinez, E. John ; Evans, Keith ; Stutz, C.E.
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
Quantum-well doped p-channel AlGaAs/GaAs0.85Sb0.15 /GaAs heterostructure field-effect transistors (HFETs) with 50-μm gate lengths and 400-μm gate widths are reported. Using a simple analytical model, accurate values of the low-field hole mobility, the threshold voltage, parameters characterizing the gate leakage current, and the saturation currents and voltages are obtained. The calculation results are shown to be in good agreement with the experimental data
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor quantum wells; 400 micron; 50 micron; AlGaAs-GaAs0.85Sb0.15-GaAs; HFETs; analytical model; calculation results; experimental data; gate leakage current; gate lengths; gate widths; heterostructure field-effect transistors; low-field hole mobility; quantum well doped p-channel HFET; saturation currents; semiconductors; threshold voltage; Buffer layers; Gallium arsenide; HEMTs; Leakage current; MODFETs; Ohmic contacts; Quantum well devices; Quantum wells; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
