Title :
Rapid electrical measurements of back oxide and silicon film thickness in an SOI CMOS process
Author :
Haond, M. ; Tack, M.
Author_Institution :
CNET-CNS, Meylan, France
fDate :
3/1/1991 12:00:00 AM
Abstract :
A method which uses the front and the back gates of a fully depleted SOI transistor to extract the thickness of both the silicon film and the buried oxide is described. This is done by plotting the variation of the threshold voltage of the transistor driven by one gate versus the bias on the other gate and vice versa. Both the silicon film and the buried-oxide thicknesses can be derived independently. Any SOI transistor that can go into a fully depleted mode can be used
Keywords :
CMOS integrated circuits; semiconductor-insulator boundaries; thickness measurement; SOI CMOS process; Si film thickness measurement; back gate; back oxide thickness measurement; buried-oxide thicknesses; front gate; fully depleted SOI transistor; rapid electrical measurement; threshold voltage variation; CMOS process; Contacts; Electric variables measurement; Electron devices; HEMTs; MODFETs; Semiconductor films; Silicon; Thickness measurement; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
