Title :
High-performance a-Si:H thin-film transistor using lightly doped channel
Author :
Sah, Wen-Jyh ; Lin, Jyh-Ling ; Lee, Si-Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taiwan
fDate :
3/1/1991 12:00:00 AM
Abstract :
The fabrication of amorphous silicon thin-film transistors (TFTs) using a lightly phosphorus-doped channel is discussed. The transistors achieve an on-off current ratio exceeding six orders of magnitude and a field effect mobility of 0.4 cm2/V-s. These characteristics are found to be much better than those using an undoped channel with the same device structure. It is found that the incorporation of phosphorus in the channel can compensate the interface states and improve the transconductance of the TFT. It is shown that the fabrication of a depletion-mode TFT is fully compatible with the conventional enhancement-mode TFT process
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; phosphorus; semiconductor doping; silicon; thin film transistors; Si:H,P; amorphous Si:H; depletion-mode TFT; enhancement-mode TFT process; fabrication; field effect mobility; interface states compensation; lightly doped channel; on-off current ratio; thin-film transistor; transconductance; Amorphous silicon; Circuits; Doping profiles; Electron devices; FETs; MOSFETs; Optical devices; Optical films; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
