Title :
Recovery of high-field GaAs photoconductive semiconductor switches
Author :
Zutavern, Fred J. ; Loubriel, Guillermo M. ; Malley, M. W O ; Schanwald, L.P. ; McLaughlin, D.L.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
Three categories of circuits were explored to induce fast recovery, after lock-on by temporarily reducing the field across the switch. Measurements of recovery times from 35 to 80 ns, multiple monopolar and bipolar bursts at 5-40 MHz, and hold-off fields ranging from 5-44 kV/cm (corresponding to 15-66 kV across individual switches) are presented. A comparison is made of the different circuits used to induce recovery from lock-on, and the various factors that influence the recovery are discussed
Keywords :
III-V semiconductors; gallium arsenide; photoconducting devices; semiconductor switches; 35 to 80 ns; GaAs; bipolar bursts; fast recovery; hold-off fields; lock-on; monopolar bursts; photoconductive semiconductor switches; recovery times; Electric resistance; Gallium arsenide; Impedance; Laser mode locking; Optical switches; Photoconducting devices; Power semiconductor switches; Stress; Switching circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
