Title :
Electrical and Optical Characteristics of UV Photodetector With Interlaced ZnO Nanowires
Author :
Chang, Sheng-Po ; Lu, Chien-Yuan ; Chang, Shoou-Jinn ; Chiou, Yu-Zung ; Hsueh, Ting-Jen ; Hsu, Cheng-Liang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A zinc oxide (ZnO) nanowire (NW) photodetector was fabricated with a simple method by bridging the gap of interdigitated gallium-doped ZnO pattern deposited on a silicon oxide (SiO2) thin film with interlaced ZnO NWs. With an incident wavelength of 375 nm, it was found that measured responsivity was 0.055 A/W for the interlaced ZnO NWs photodetector with a 1 V applied bias. The transient time constants measured during the turn-on and turn- off states were τON = 12.72 ms and τOFF = 447.66 ms , respectively. Furthermore, the low-frequency noise spectra obtained from the ultraviolet photodetector were purely due to the 1/f noise. Besides, the noise equivalent power and normalized detectivity (D*) of the ZnO NW photodetector were 2.32 ×10-9 W and 7.43 ×109 cm·Hz0.5·W-1, respectively.
Keywords :
1/f noise; II-VI semiconductors; gallium; nanofabrication; nanowires; photodetectors; semiconductor thin films; silicon compounds; ultraviolet detectors; wide band gap semiconductors; zinc compounds; 1/f noise; UV photodetector; ZnO-ZnO:Ga-SiO2-Si; electrical characteristics; interlaced nanowires; low frequency noise spectra; noise equivalent power; normalized detectivity; optical characteristics; power 0.00000000232 W; time 12.72 ms; time 447.66 ms; ultraviolet photodetector; voltage 1 V; wavelength 375 nm; Low-frequency noise; Nanowires; Optical films; Photodetectors; Semiconductor thin films; Silicon; Sputtering; Time measurement; Wavelength measurement; Zinc oxide; Detectivity; nanowire (NW); noise; noise equivalent power (NEP); photodetector; zinc oxide (ZnO);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2010.2046884
