Title :
Improved breakdown for SOI MOSFETs fabricated in electron-beam recrystallized polysilicon
Author :
Hobbs, L. ; Mathewson, A. ; Lane, W.A.
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll., Cork, Ireland
Abstract :
The breakdown mechanism for SOI (silicon-on-insulator) n-type MOSFETs is discussed. It is proposed that by reducing the channel lateral electric field at the drain that breakdown can be increased. A two-dimensional finite-element modeling program was used to design a treble diffused drain-sources (TDD) implant profile which would increase the breakdown voltage. The modeling showed that a linearly graded structure would lower the electric field in the channel and would subsequently increase drain-source breakdown voltage by over 20%. Transistors fabricated in e-beam recrystallized material verified these predictions.<>
Keywords :
electric strength; elemental semiconductors; finite element analysis; insulated gate field effect transistors; recrystallisation; SOI MOSFETs; breakdown voltage; channel lateral electric field; drain; drain-source breakdown voltage; e-beam recrystallized material; electric field; implant profile; linearly graded structure; n-type; polycrystalline Si; treble diffused drain-sources; two-dimensional finite-element modeling program; Breakdown voltage; Charge carrier processes; Electric breakdown; Finite element methods; Impact ionization; Implants; Impurities; MOSFETs; Temperature;
Journal_Title :
Electron Device Letters, IEEE
