Title :
InAs/InP Quantum-Dot Passively Mode-Locked Lasers for 1.55-μ m Applications
Author :
Rosales, Ricardo ; Merghem, Kamel ; Martinez, Anthony ; Akrout, A. ; Tourrenc, J.-P. ; Accard, Alain ; Lelarge, Francois ; Ramdane, Abderrahim
Author_Institution :
Lab. for Photonics & Nanostruct., Marcoussis, France
Abstract :
This paper reports on recent results on passively mode-locked InAs/InP quantum-dot-based lasers. These low-dimensional structures have proved very attractive in improving most of the properties of these devices. Subpicosecond pulse generation at repetition rates up to beyond 300 GHz has readily been demonstrated. Ultranarrow RF linewidths reach record values of less than 1 kHz. Controlled optical feedback allows a further reduction of this linewidth yielding extremely low timing jitter. A comparison of single-section and standard two-section lasers is given for the first time. These performances open the way to various applications at 1.55 μm, including very high bit rate all-optical signal processing, frequency comb generation, radio over fiber, and low-noise all-optical oscillators.
Keywords :
III-V semiconductors; indium compounds; laser feedback; laser mode locking; optical pulse generation; quantum dot lasers; timing jitter; InAs-InP; controlled optical feedback; frequency comb generation; high-bit rate optical signal processing; low-dimensional structures; low-noise all-optical oscillators; quantum-dot passively mode-locked lasers; radio over fiber; single-section laser; standard two-section lasers; subpicosecond pulse generation; timing jitter; ultranarrow RF linewidths; wavelength 1.55 mum; Laser mode locking; Materials; Optical pulse generation; Radio frequency; Timing jitter; Ultrafast optics; Mode-locked semiconductor lasers; optical pulse generation; quantum dot (QD) lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2011.2116772
