Author :
Ismail, Khalid E. ; Bagwell, Philip F. ; Orlando, Terry P. ; Antoniadis, Dimitri A. ; Smith, Henry I.
Abstract :
Quantum effects resulting from sub-100 nm features in planar, field-effect-controlled semiconductor structures or devices are discussed, and experimental results are compared with calculations. These devices are based on the GaAs-AlGaAs modulation-doped field-effect transistor (MODFET) and include grating-gate lateral surface superlattices. (LSSLs), grid-gate LSSLs, planar-resonant-tunneling field-effect transistors (PRESTFETs), multiple parallel quantum wires (MPQWs), and arrays of quantum dots (QDs). In contrast to conventional, epitaxially grown vertical quantum structures, planar structures offer the opportunity for electron confinement in three, two, and one dimensions and the flexibility of electrical tuning of quantum effects
Keywords :
field effect devices; high electron mobility transistors; quantum interference devices; resonant tunnelling devices; semiconductor device models; semiconductor quantum dots; semiconductor quantum wires; semiconductor superlattices; GaAs-AlGaAs; MODFET; RTD; electron confinement; field-effect transistor; field-effect-controlled; grating-gate; grid-gate; lateral surface superlattices.; modulation-doped; multiple parallel quantum wires; planar structures; planar-resonant-tunneling; quantum dot array; quantum effects; semiconductor nanostructures; Electrons; Epitaxial layers; FETs; Fabrication; MODFETs; Quantum computing; Quantum dots; Semiconductor nanostructures; Switches; Wires;
