Structural and electrical properties of sol-gel synthesized PLZT thin films

Author

Vijayaraghavan, C. ; Goel, T.C. ; Mendiratta, R.G.

Author_Institution

Dept. of Phys., Indian Inst. of Technol., New Delhi, India

Volume

6

Issue

1

fYear

1999

fDate

2/1/1999 12:00:00 AM

Firstpage

69

Lastpage

72

Abstract

Thin films of PLZT with PbTiO₃ interlayers have been fabricated by using a sol-gel spin-on process. Three compositions of PLZT, namely 8/65/35, 15/40/60 and 18/30/70, have been deposited on platinum and quartz substrates and heat treated at 650°C. All three compositions have crystallized in the perovskite phase. The 8/65/35 composition, which has been investigated in greater detail exhibits a low value of leakage current. It also exhibits polarization hysteresis, with E_c=20 kV/cm and P_r=25 μC/cm²

Keywords

dielectric polarisation; ferroelectric thin films; heat treatment; lanthanum compounds; lead compounds; leakage currents; sol-gel processing; 650 degC; PLZT; PbLaZrO3TiO3; ferroelectric thin films; heat treatment; leakage current; polarization hysteresis; remanent polarisation; sol-gel synthesized thin films; spin-on process; Lanthanum; Leakage current; Optical films; Optical modulation; Semiconductor thin films; Sputtering; Substrates; Temperature; Transistors; Zirconium;

fLanguage

English

Journal_Title

Dielectrics and Electrical Insulation, IEEE Transactions on

Publisher

ieee

ISSN

1070-9878

Type

jour

DOI

10.1109/94.752012

Filename

752012