Contamination of silicon surface due to contact with solid polymers

Author

Iyer, Nandini ; Saka, Nannaji ; Chun, Jung-Hoon

Author_Institution

Dept. of Mech. Eng., MIT, Cambridge, MA, USA

Volume

14

Issue

2

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

85

Lastpage

96

Abstract

The present research investigates material transfer associated with the contact between polymers and silicon surfaces. Material transfer from a variety of solid polymers (UHMWPE, Teflon, KEL-F, PMMA, Nylon 66, and PEEK) was studied and characterized by optical microscopy, scanning electron microscopy, atomic force microscopy, and by computer image analysis. Experimental results suggest that material transfer is affected by the Hertz contact area. The number of particles and the total particle area increase with an increase in load and a decrease in the Young´s modulus. Also, material transfer increases when the contacting surfaces are rougher. Friction appears to be a weak parameter in the material transfer phenomenon. Additionally, hardness is significant only when normal loading is great enough to initiate plastic deformation in the polymer

Keywords

Young´s modulus; atomic force microscopy; elemental semiconductors; friction; hardness; optical microscopy; plastic deformation; scanning electron microscopy; semiconductor technology; silicon; spin coating; Hertz contact area; KEL-F; Nylon 66; PEEK; PMMA,; Si; Teflon; UHMWPE; Young´s modulus; atomic force microscopy; computer image analysis; contamination; friction; hardness; material transfer; optical microscopy; plastic deformation; scanning electron microscopy; solid polymers; total particle area; Atom optics; Atomic force microscopy; Electron optics; Optical materials; Optical microscopy; Optical polymers; Scanning electron microscopy; Silicon; Solids; Surface contamination;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.920718

Filename

920718