Title :
A 128×128-pixel standard-CMOS image sensor with electronic shutter
Author :
Aw, Chye Huat ; Wooley, Bruce A.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
A 128×128-pixel image sensor with a 20 s-10-4 s electronic shutter has been integrated in a 1.2-μm digital CMOS technology. The pixel cell consists of four PMOS transistors and a photodiode with antiblooming suppression. Each pixel measures 24 μm by 24 μm and has a fill factor of 25%. Current is used to transfer pixel signals to the column readout amplifiers in order to minimize voltage swings on the highly capacitive column lines. Correlated double sampling is used to reduce intracolumn fixed pattern noise. The saturation voltage is 470 mV. The peak output signal to noise ratio is 45 dB, and the optical dynamic range is 56 dB. The frame transfer rate is 1.7 ms per frame
Keywords :
CMOS integrated circuits; image sensors; photodiodes; photography; 1.2 micron; 128 pixel; 16384 pixel; 24 micron; 470 mV; antiblooming suppression; capacitive column lines; column readout amplifiers; correlated double sampling; electronic shutter; fill factor; frame transfer rate; intracolumn fixed pattern noise; optical dynamic range; peak output signal to noise ratio; photodiode; pixel signals; saturation voltage; standard-CMOS image sensor; voltage swings; CMOS image sensors; CMOS technology; Image sensors; MOSFETs; Noise reduction; Optical amplifiers; Optical noise; Photodiodes; Sampling methods; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
