DocumentCode :
1484141
Title :
Energy effect of the laser-induced vertical metallic link
Author :
Zhang, Wei ; Lee, Joo-Han ; Bernstein, Joseph B.
Author_Institution :
Dept. of Mater. & Nucl. Eng., Maryland Univ., College Park, MD, USA
Volume :
14
Issue :
2
fYear :
2001
fDate :
5/1/2001 12:00:00 AM
Firstpage :
163
Lastpage :
169
Abstract :
In this paper, the energy effect of the laser vertical metallic link is investigated from a microscopic point of view through experimental observations and simulations. Sample structures that were irradiated under different laser energies were cross-sectioned and observed using a FIB/SEM dual-beam system. Failure criterion at the high energy level was defined by excessive material loss in the lower metal (metal 1) and passivation cracking. Micro-images also suggest that, for an optimal link metal (metal 2) opening should be larger than the lower metal linewidth considering the dielectric-step-induced lens effect. Taking into account both measured electrical resistance and observed voids in the lower metal, the normalized energy process window is defined to be the absolute energy range divided by the average energy. For the structures with 1-, 2-, 3-, and 4-μm lower metal linewidths, the relative process windows are 0.83, 0.87, 0.9, and 0.96, respectively. Simulations also revealed consistent results with the experimental observations, which is a monotonically decreasing trend of relative energy process windows for more scaled links. A simple equation to evaluate the spot size of the laser beam for various link structures is presented. These results demonstrate the application of commercially viable vertical linking technology to VLSI applications
Keywords :
VLSI; focused ion beam technology; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; laser materials processing; scanning electron microscopy; 1 to 4 micron; FIB/SEM dual-beam system; VLSI applications; absolute energy range; dielectric-step-induced lens effect; electrical resistance; energy effect; excessive material loss; laser-induced vertical metallic link; metal linewidth; normalized energy process window; passivation cracking; relative energy process windows; spot size; vertical linking technology; voids; Dielectric materials; Dielectric measurements; Electrical resistance measurement; Energy states; Inorganic materials; Lenses; Numerical analysis; Optical materials; Passivation; Scanning electron microscopy;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.920728
Filename :
920728
Link To Document :
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