• DocumentCode
    1484162
  • Title

    Ion milling properties of laterally emitting thin-film electroluminescent materials

  • Author

    Barros, Sara Otero ; Stevens, Robert ; Thomas, Clive B. ; Cranton, Wayne ; Craven, Mark

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Nottingham Trent Univ., UK
  • Volume
    14
  • Issue
    2
  • fYear
    2001
  • fDate
    5/1/2001 12:00:00 AM
  • Firstpage
    173
  • Lastpage
    176
  • Abstract
    A study has been undertaken of the ion milling properties of ZnS:Mn, Y2O3, Si3N4, SiO2, SiOxNy, and Al versus the etching time, the acceleration voltage, and the angle of incidence of the ion beam. Different ZnS:Mn etched profiles have been fabricated by modifying the angle of incidence; these are in agreement with the reported simulations
  • Keywords
    II-VI semiconductors; electroluminescent devices; elemental semiconductors; manganese; phosphors; silicon; sputter etching; yttrium compounds; zinc compounds; Si3N4; SiO2; SiON; ZnS:Mn-Y2O3-Si; acceleration voltage; angle of incidence; etching time; ion milling properties; laterally emitting thin-film electroluminescent materials; Apertures; Argon; Electroluminescent devices; Ion beams; Milling; Resists; Sputter etching; Sputtering; Thin film devices; Transistors;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.920730
  • Filename
    920730
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1484162