Large spontaneous emission factor of 0.1 in a microdisk injection laser

Author

Fujita, R. ; Ushigome, R. ; Baba, T.

Author_Institution

Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan

Volume

13

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

403

Lastpage

405

Abstract

A large spontaneous emission factor of 0.1 was evaluated in a 1.56 μm-GaInAsP microdisk injection laser operating under continuous-wave condition with a threshold current of 50 μA. Some clear evidence of the large spontaneous emission factor, i.e., superlinear light-current characteristics and nonclamped carrier-current characteristics, were observed. It was confirmed that the matching of the lasing wavelength to the spontaneous emission allowed larger spontaneous emission factor.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; microdisc lasers; quantum well lasers; spontaneous emission; 1.56 mum; 50 muA; GaInAsP; GaInAsP microdisk injection laser; continuous-wave condition; large spontaneous emission factor; lasing wavelength matching; nonclamped carrier-current characteristics; superlinear light-current characteristics; threshold current; Laser modes; Laser theory; Microcavities; Power lasers; Semiconductor lasers; Spectral analysis; Spontaneous emission; Stimulated emission; Threshold current; Whispering gallery modes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.920731

Filename

920731