Title :
Semiconductor lasers with 2-D-photonic crystal mirrors based on a wet-oxidized Al2O3-mask
Author :
Moosburger, J. ; Kamp, M. ; Klopf, F. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
fDate :
5/1/2001 12:00:00 AM
Abstract :
We have fabricated and investigated AlGaAs-InGaAs-based ridge waveguide (RWG) lasers with two-dimensional (2-D) triangular photonic crystal (PC) mirrors using a wet-oxidized Al/sub 2/O/sub 3/ mask for the dry etching of the PC at one end of the ridge. The laser structure includes a 60-nm-thick AlAs layer positioned in the upper cladding, which is converted into Al/sub 2/O/sub 3/ after the definition of the PC by electron beam lithography and shallow etching. Etching of the holes is then continued using the Al/sub 2/O/sub 3/ mask, to a final depth of 600 nm. The continuous-wave characteristics of the lasers show a clear dependence on the period of the PC including a significant decrease of the threshold current and an increase of the efficiency for properly adjusted crystal parameters.
Keywords :
III-V semiconductors; alumina; aluminium compounds; electron beam lithography; gallium arsenide; laser mirrors; masks; optical fabrication; oxidation; photonic band gap; quantum well lasers; ridge waveguides; sputter etching; waveguide lasers; 2-D-photonic crystal mirrors; 60 nm; 600 nm; Al/sub 2/O/sub 3/; AlAs; AlAs layer; AlGaAs-InGaAs; AlGaAs-InGaAs-based ridge waveguide lasers; continuous-wave characteristics; dry etching; efficiency; electron beam lithography; laser structure; properly adjusted crystal parameters; semiconductor lasers; shallow etching; threshold current; two-dimensional triangular photonic crystal mirrors; upper cladding; wet-oxidized Al/sub 2/O/sub 3/-mask; Dry etching; Electron beams; Lithography; Mirrors; Photonic crystals; Semiconductor lasers; Semiconductor waveguides; Threshold current; Two dimensional displays; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
