Title :
Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique
Author :
Liu, G. ; Jin, X. ; Chuang, S.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
5/1/2001 12:00:00 AM
Abstract :
A new method for measuring the linewidth enhancement factor is presented. This idea is based on the relation between the upper and lower bounds of the locked and unlocked regimes when the detuning of the pump and slave laser is plotted as a function of the injection power. Our results are confirmed with an independent measurement using amplified spontaneous emission (ASE) spectroscopy as well as our theory, which takes account of the realistic quantum-well (QW) band structure and many-body effects. This method provides a new approach to measure the linewidth enhancement factor above laser threshold.
Keywords :
band structure; laser mode locking; laser variables measurement; quantum well lasers; spectral line breadth; superradiance; ASE; InGaAlAs; amplified spontaneous emission spectroscopy; detuning; injection power; injection-locking technique; laser threshold; linewidth enhancement factor; locked regimes; lower bounds; many-body effects; pump laser; quantum-well band structure; semiconductor lasers; slave laser; unlocked regimes; upper bounds; Erbium-doped fiber lasers; High speed optical techniques; Laser modes; Laser stability; Laser theory; Power lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Testing;
Journal_Title :
Photonics Technology Letters, IEEE
