Title :
Collector signal delay in the presence of velocity overshoot
Author :
Laux, Steven E. ; Lee, Wai
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
It is pointed out that the well-known expression equating the collector signal delay to one-half of the transit time through the base-collector depletion region is incorrect in the presence of a nonconstant carrier velocity, as occurs in the case of velocity overshoot. The correct expression yields a smaller signal delay than the conventional estimate for typical situations, further emphasizing the benefit of velocity overshoot in bipolar devices.<>
Keywords :
bipolar transistors; delays; semiconductor device models; base-collector depletion region; bipolar devices; collector signal delay; nonconstant carrier velocity; transistor; transit time; velocity overshoot; Anodes; Bipolar transistors; Cathodes; Delay effects; Delay estimation; Electron tubes; Frequency; Transfer functions; Yield estimation;
Journal_Title :
Electron Device Letters, IEEE