DocumentCode :
1484282
Title :
Collector signal delay in the presence of velocity overshoot
Author :
Laux, Steven E. ; Lee, Wai
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
11
Issue :
4
fYear :
1990
fDate :
4/1/1990 12:00:00 AM
Firstpage :
174
Lastpage :
176
Abstract :
It is pointed out that the well-known expression equating the collector signal delay to one-half of the transit time through the base-collector depletion region is incorrect in the presence of a nonconstant carrier velocity, as occurs in the case of velocity overshoot. The correct expression yields a smaller signal delay than the conventional estimate for typical situations, further emphasizing the benefit of velocity overshoot in bipolar devices.<>
Keywords :
bipolar transistors; delays; semiconductor device models; base-collector depletion region; bipolar devices; collector signal delay; nonconstant carrier velocity; transistor; transit time; velocity overshoot; Anodes; Bipolar transistors; Cathodes; Delay effects; Delay estimation; Electron tubes; Frequency; Transfer functions; Yield estimation;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.61781
Filename :
61781
Link To Document :
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