Title :
An expansion method for calculation of low-frequency Hall effect and magneto-resistance
Author_Institution :
Ghent State University, Laboratory of Electronics, Ghent, Belgium
fDate :
6/1/1974 12:00:00 AM
Abstract :
The potential equation in three dimensions for a semiconductor, placed in an external magnetic field, is derived. This equation is solved by an expansion technique. The first-order expansion gives the Hall effect, whereas the second-order describes the magneto-resistance effect. The theory is applied to a rectangular and a cylindrical volume, which are treated analytically.
Keywords :
Hall effect; magnetoresistance; semiconductors; Hall effect; Hall generators; LF; expansion method; magneto resistance; potential equation; semiconductor;
Journal_Title :
Radio and Electronic Engineer
DOI :
10.1049/ree.1974.0088
