Title :
A novel high-Q and wide-frequency-range inductor using Si 3-D MMIC technology
Author :
Kamogawa, Kenji ; Nishikawa, Kenjiro ; Toyoda, Ichihiko ; Tokumitsu, Tsuneo ; Tanaka, Masayoshi
Author_Institution :
NTT Wireless Syst. Lab., Kanagawa, Japan
fDate :
1/1/1999 12:00:00 AM
Abstract :
A novel high-Q and wide-frequency-range inductor formed using three-dimensional (3-D) monolithic microwave integrated circuit (MMIC) technology on a conductive Si substrate is presented. A fabricated 1.24-nH spiral inductor achieves the very high resonant frequency of 29.3 GHz and maximum quality factor (Q) of 45.77 owing to thick dielectric layers and a ground plane that overlays the substrate. The measured results show that the Si 3-D MMIC is very suitable for realizing single-chip and mixed-mode transceivers for L-band to Ku-band applications
Keywords :
MMIC; Q-factor; elemental semiconductors; inductors; silicon; 29.3 GHz; 3D MMIC technology; Ku-band; L-band; Si; conductive Si substrate; dielectric layer; ground plane; mixed-mode transceiver; quality factor; resonant frequency; single-chip transceiver; spiral inductor; three-dimensional monolithic microwave integrated circuit; Dielectric substrates; Inductors; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Q factor; Resonant frequency; Spirals;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
