DocumentCode :
1484518
Title :
Common and differential crosstalk characterization on the silicon substrate
Author :
Eisenstadr, W.R. ; Bockelman, D.E.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume :
9
Issue :
1
fYear :
1999
Firstpage :
25
Lastpage :
27
Abstract :
Integrated circuit pad-to-pad crosstalk characterization structures were fabricated and measured over a 8000 μm×2500 μm area using Al pads on a silicon substrate. The structures were tested by a pure-mode network analyzer to yield common- and differential-mode crosstalk at 1 and 2 GHz. Differential-mode signals introduce far less substrate noise. This novel technique can characterize substrate noise levels near sensitive radio frequency (RF) and microwave circuits.
Keywords :
crosstalk; elemental semiconductors; integrated circuit noise; microwave integrated circuits; network analysers; silicon; substrates; 1 to 2 GHz; Al; Al bond pad; RF circuit; Si; common-mode signal; crosstalk; differential-mode signal; integrated circuit; microwave circuit; noise; pure-mode vector network analyzer; silicon substrate; Area measurement; Circuit testing; Crosstalk; Integrated circuit measurements; Integrated circuit noise; Integrated circuit yield; Microwave theory and techniques; Noise level; Radio frequency; Silicon;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.752113
Filename :
752113
Link To Document :
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