DocumentCode :
1484534
Title :
Monolithic GaAs phase shifter circuit with low insertion loss and continuous 0-360° phase shift at 20 GHz
Author :
Nagra, Amit S. ; Xu, Jian ; Erker, Erich ; York, Robert A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
9
Issue :
1
fYear :
1999
fDate :
1/1/1999 12:00:00 AM
Firstpage :
31
Lastpage :
33
Abstract :
We present here a circuit capable of continuous 0-360° phase shift at 20 GHz with only 4.2 dB of insertion loss. The phase shifter employs a variable velocity transmission line obtained by periodically loading a coplanar waveguide (CPW) line with GaAs Schottky diodes. The circuit is fabricated on GaAs using monolithic fabrication techniques that are compatible with commercial GaAs foundry processes. To the best of our knowledge, this circuit has the lowest reported insertion loss for a monolithic solid state phase shifter operating at 20 GHz
Keywords :
III-V semiconductors; MMIC phase shifters; Schottky diodes; coplanar waveguide components; gallium arsenide; 20 GHz; 4.2 dB; GaAs; GaAs Schottky diode; coplanar waveguide; insertion loss; monolithic solid-state phase shifter circuit; transmission line; Coplanar transmission lines; Coplanar waveguides; Distributed parameter circuits; Fabrication; Foundries; Gallium arsenide; Insertion loss; Loaded waveguides; Phase shifters; Schottky diodes;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.752115
Filename :
752115
Link To Document :
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