Title :
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
Author :
Patton, Gary L. ; Comfort, James H. ; Meyerson, Bernard S. ; Crabbé, Emmanuel F. ; Scilla, Gerald J. ; De Frésart, Edouard ; Stork, Johannes M C ; Sun, Jack Y C ; Harame, David L. ; Burghartz, Joachim N.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
The fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (R/sub bi/) of 17 k Omega / Square Operator , and an emitter width of 0.9 mu m is discussed. This performance level, which represents an increase by almost a factor of 2 in the speed of a Si bipolar transistor, was achieved in a poly-emitter bipolar process by using SiGe for the base material. The germanium was graded in the 45-nm base to create a drift field of approximately 20 kV/cm, resulting in an intrinsic transit time of only 1.9 ps.<>
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor materials; solid-state microwave devices; 0.9 micron; 1.9 ps; 75 GHz; EHF; MM-wave device; SiGe base; collector-base bias; emitter width; fabrication; heterojunction bipolar transistors; intrinsic base sheet resistance; intrinsic transit time; microwave transistors; millimetre wave region; poly-emitter bipolar process; unity-current-gain cutoff frequency; Boron; Calibration; Cutoff frequency; Electrical resistance measurement; Electrons; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Silicon germanium;
Journal_Title :
Electron Device Letters, IEEE
