Title :
An FBAR/CMOS Frequency/Phase Discriminator and Phase Noise Reduction System
Author :
Imani, Alireza ; Hashemi, Hossein
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
A phase noise reduction scheme using a sensitive resonator-based low-noise phase-frequency discriminator is presented in this paper. The discriminator uses a high quality factor thin film bulk acoustic resonator in a notch filter configuration with common-mode traps to reduce the low-frequency noise up-conversion. The phase noise reduction scheme comprises of a main feedback loop to lock a voltage-controlled oscillator to the discriminator and another loop to adjust the depth of the notch. Two chips were fabricated in 0.13- μm CMOS technology integrating the discriminator and the phase noise reduction schemes, respectively. The 1.5-GHz discriminator shows phase noise floor of -128 dBc/Hz at 20 kHz, -142 dBc/Hz at 100 kHz, -162 dBc/Hz at 1 MHz, and -166 dBc/Hz at 4 MHz, while consuming 26 mW of power. The measured phase noise of the feedback reduction circuitry reaches the phase noise floor of the discriminator within the loop bandwidth, as expected.
Keywords :
CMOS integrated circuits; Q-factor; UHF resonators; acoustic resonator filters; circuit feedback; discriminators; notch filters; phase noise; thin film devices; voltage-controlled oscillators; FBAR-CMOS frequency-phase discriminator; common-mode traps; feedback reduction circuitry; frequency 1.5 GHz; high quality factor thin film bulk acoustic resonator; low-frequency noise up-conversion reduction; main feedback loop; notch filter configuration; phase noise reduction system; power 26 mW; sensitive resonator-based low-noise phase-frequency discriminator; size 0.13 mum; voltage-controlled oscillator; Frequency modulation; Mixers; Noise measurement; Phase noise; Resonant frequency; Bulk acoustic wave; CMOS; frequency locking; oscillator; phase noise; phase noise reduction;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2015.2416239