DocumentCode :
1484913
Title :
Quantitative characterization of sputter-process-induced nano-voids and porous film state in magnetic thin films
Author :
Gao, Chum ; Malmhäll, Roger ; Chen, Ga-Lane
Author_Institution :
Seagate Recording Media Group, Fremont, CA, USA
Volume :
33
Issue :
5
fYear :
1997
fDate :
9/1/1997 12:00:00 AM
Firstpage :
3013
Lastpage :
3015
Abstract :
The effect of sputter-process-induced nano-voids on transition metal film magnetic properties has been investigated. Sputtering pressure was used as a means to control the sputtering adatom mobility. At high mobility (low pressure), saturation magnetization (Ms*) of the films agrees with the transition metal bulk values, whereas at low mobility Ms* deviates from the bulk values. When measuring saturation moment density (σs), however, this value was not affected by different adatom mobility. X-ray diffraction, Auger spectroscopy and Mossbauer analysis suggest that the Ms* decrease is not an intrinsic change. The discrepancy between Ms* and σs values is interpreted as a porosity state of the transition metal films (nano-voids). Transmission electron microscopy confirmed that nano-voids had developed during the low mobility sputtering deposition and the ratio of voids to grains increased with decreasing adatom mobility
Keywords :
Auger effect; Mossbauer spectroscopy; X-ray diffraction; electron spectroscopy; magnetic moments; magnetic recording noise; magnetic thin films; magnetisation; porosity; sputter deposition; voids (solid); Auger spectroscopy; Mossbauer analysis; X-ray diffraction; grains; magnetic thin films; porosity state; porous film state; saturation magnetization; saturation moment density; sputter-process-induced nano-voids; sputtering adatom mobility; transition metal film; Density measurement; Electron mobility; Magnetic films; Magnetic properties; Pressure control; Saturation magnetization; Spectroscopy; Sputtering; Transmission electron microscopy; X-ray diffraction;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.617828
Filename :
617828
Link To Document :
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