Channel hot-carrier stressing of reoxidized nitrided oxide p-MOSFETs

Author

Dunn, Gregory J. ; Krick, John T.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

38

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

901

Lastpage

906

Abstract

Channel hot carrier reliability of reoxidized nitrided oxide (RNO) and conventional oxide p-MOSFETs was studied. RNO p-MOSFET degradation is shown to be due to electron trapping, as in oxide devices. Since nitridation introduces electron traps, device lifetimes determined by static stress were found to be lower by 2-3 orders of magnitude in the RNO than in the oxide p-MOSFETs. However, circuit life is determined by the shortest-lived device type. For conventional oxide, circuit lifetime is determined by n-MOSFET lifetime. The authors demonstrate that both RNO n- and p-channel lifetimes are many orders of magnitude longer than oxide n-channel lifetimes; therefore, for submicrometer CMOS, use of RNO is predicted to increase circuit lifetime significantly. X-ray irradiations were found to degrade oxide p-channel hot carrier reliability far more strongly than RNO reliability

Keywords

X-ray effects; electron traps; hot carriers; insulated gate field effect transistors; nitridation; reliability; RNO; X-ray; channel hot carrier stressing; device lifetimes; electron trapping; hot carrier reliability; irradiations; nitridation; p-MOSFETs; reoxidized nitrided oxide; submicrometer CMOS; Charge measurement; Charge pumps; Current measurement; Degradation; Density measurement; Electron traps; Hot carriers; MOSFET circuits; Stress measurement; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.75221

Filename

75221