Title :
Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications
Author :
Qasaimeh, Omar ; Zhou, Weidong ; Bhattacharya, Pallab ; Huffaker, Diana ; Deppe, Dennis G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
4/1/2001 12:00:00 AM
Abstract :
A low-power GaAs-based monolithically integrated phototransceiver, consisting of a high-gain heterojunction phototransistor (WPT) and a microcavity light-emitting diode (MCLED) or a low-threshold vertical-cavity surface-emitting laser (VCSEL), is demonstrated. The HPT and MCLED/VCSEL are grown by molecular-beam epitaxy in a single step. The phototransistor exhibits a responsivity of 60 A/W at an input power of 1 μW. The input and output wavelengths are 850 and 980 nm, respectively. The MCLED-based phototransceiver exhibits an optical gain of 7 dB and power dissipation of 400 μW for an input power of 1.5 μW. The small signal modulation bandwidth is 80 MHz. On the other hand, the VCSEL-based phototransceiver exhibits an optical gain of 10 dB and power dissipation of 760 μW for an input power of 2.5 μW
Keywords :
III-V semiconductors; gallium arsenide; integrated optoelectronics; light emitting diodes; micro-optics; optical receivers; optical transmitters; phototransistors; semiconductor lasers; surface emitting lasers; transceivers; 1 muW; 1.5 muW; 2.5 muW; 7 dB; 760 muW; 850 nm; 980 nm; GaAs; GaAs-based monolithically integrated phototransceiver; LED; VCSEL; VCSEL-based phototransceiver; high-gain heterojunction phototransistor; input power; low-power; low-threshold vertical-cavity surface-emitting laser; microcavity light-emitting diode; molecular-beam epitaxy; monolithically integrated low-power phototransceivers; optical gain; optoelectronic parallel sensing; parallel processing applications; phototransistor; power dissipation; responsivity; small signal modulation bandwidth; Gain; Heterojunctions; Light emitting diodes; Microcavities; Optical modulation; Optical surface waves; Phototransistors; Power dissipation; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Lightwave Technology, Journal of
