Title :
Anomalous kink-related excess noise in MOSFETs at 4.2 K
Author :
Dierickx, Bart ; Simoen, Eddy ; Cos, Stefan ; Vermeiren, J. ; Claeys, Cor ; Declerck, Gilbert J.
Author_Institution :
IMEC v.z.w., Leuven, Belgium
fDate :
4/1/1991 12:00:00 AM
Abstract :
The anomalous drain-voltage-dependent excess noise that is observed in silicon MOSFETs at cryogenic temperatures is examined. A model for the underlying physics is described. It is shown that the mechanisms inducing this excess noise are shallow-level impact ionization and trapping in the bulk of the MOSFET. A model for the noise spectrum and amplitude is proposed and is validated by the measurements. Evidence-both theoretical and experimental-is presented for the correlation between the anomalous low-frequency noise and the kink/hysteresis observed in the characteristics of MOSFETs operating at 4.2 K
Keywords :
cryogenics; electron device noise; electron traps; elemental semiconductors; hole traps; impact ionisation; insulated gate field effect transistors; semiconductor device models; silicon; 4.2 K; MOSFET; Si; anomalous low-frequency noise; cryogenic temperatures; drain-voltage-dependent excess noise; hysteresis; kink-related excess noise; model; noise spectrum; shallow-level impact ionization; trapping; Cryogenics; Hysteresis; Impact ionization; Low-frequency noise; MOSFETs; Noise level; Noise measurement; Physics; Silicon; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
