Title :
PtSi Schottky-barrier focal plane arrays for multispectral imaging in ultraviolet, visible, and infrared spectral bands
Author :
Tsaur, Bor-Yeu ; Chen, C.K. ; Mattia, John-Paul
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
PtSi Schottky-barrier detectors, which are conventionally used in the back-illumination mode for thermal imaging in the 3-5- mu m infrared (IR) spectral band, are shown to exhibit excellent photoresponse in the near-ultraviolet and visible regions when operated in the front-illumination mode. For devices without antireflection coatings, external quantum efficiency in excess of 60% has been obtained for wavelengths between 400 and 800 nm. The efficiency decreases below 400 nm but is still about 35% at 290 nm. High-quality imaging has been demonstrated in both the visible and 3-5- mu m spectral bands for front-illuminated 160*244-element PtSi focal plane arrays integrated with monolithic CCD readout circuitry.<>
Keywords :
Schottky-barrier diodes; image sensors; infrared detectors; infrared imaging; photodetectors; platinum compounds; ultraviolet detectors; 160 pixel; 244 pixel; 290 to 800 nm; 35 to 60 percent; 39040 pixel; IR band; PtSi-Si; Schottky-barrier detectors; external quantum efficiency; focal plane arrays; front-illumination mode; image sensors; infrared spectral bands; monolithic CCD readout circuitry; multispectral imaging; near UV region; photoresponse; ultraviolet band; visible regions; Charge coupled devices; Infrared detectors; Infrared imaging; Infrared spectra; Multispectral imaging; Optical imaging; Photonic band gap; Semiconductor films; Silicides; Substrates;
Journal_Title :
Electron Device Letters, IEEE
