Title :
Attractive magnetic memories
Author :
Katti, Romney R. ; Zhu, Theodore
fDate :
3/1/2001 12:00:00 AM
Abstract :
Giant magneto-resistive random-access memories (GMRAMs) are magnetic nonvolatile random-access memories that use magnetic storage in magnetic multilayers to store data and the giant magneto-resistance (GMR) effect to read stored data. Pseudo-spin-valve (PSV) and spin-valve (SV) devices are patterned magnetic multilayers that exhibit the GMR effect in current-in-plane (CIP) structures. This article will focus on the operating principles of PSV and SV devices as CIP GMRAM elements
Keywords :
giant magnetoresistance; magnetic multilayers; magnetic storage; magnetoresistive devices; random-access storage; spin valves; current-in-plane structure; giant magnetoresistive random access memory; magnetic multilayer; nonvolatile memory; pseudo-spin-valve device; spin-valve device; Iron; Magnetic devices; Magnetic memory; Magnetic multilayers; Magnetic properties; Magnetic semiconductors; Magnetization; Nonvolatile memory; Random access memory; Read-write memory;
Journal_Title :
Circuits and Devices Magazine, IEEE
