Title :
Performance potential of low-voltage power MOSFETs in liquid-nitrogen-cooled power systems
Author_Institution :
General Electric Co., Schenectady, NY, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
The performance potential of a power MOSFET in cryogenic power electronic systems is discussed. Based on a simple analysis and the measured performance of scaled silicided 30-V power MOSFETs, it is shown that an order of magnitude improvement in on-state resistance can be achieved by cooling to liquid-nitrogen temperature. This performance improvement results in an order of magnitude improvement in optimum power conversion frequency for a given die size, a factor of 2 reduction in die size at a given conversion frequency, and a factor of 3 reduction in total power loss for switched-mode power converters operated at 77 K
Keywords :
cryogenics; insulated gate field effect transistors; power electronics; power transistors; semiconductor device models; 30 V; 77 K; DMOSFET; LV scaled silicided devices; cooling; cryogenic power electronic systems; liquid-nitrogen temperature; low-voltage; on-state resistance; optimum power conversion frequency; power MOSFET; switched-mode power converters; total power loss; Cryogenics; Electrical resistance measurement; Electronics cooling; Frequency conversion; MOSFETs; Performance analysis; Performance loss; Power electronics; Power measurement; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
